An IC substrate (IC carrier) is the bridge between a bare semiconductor die and the printed circuit board: it fans out the chip’s fine-pitch connections, carries power and signals, and protects the die. FX PCB manufactures custom IC substrate PCBs in Shenzhen, China — through-hole builds of 2–24 layers, HDI builds up to 10 layers / 4 stacks in production and 14 layers / 7 stacks for samples, with 35/35µm line width and spacing.

Send us your design files and stack-up requirements, and our engineers will review them and return a quote in 1–2 working days.

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Applications

Our IC substrates are built for:

Substrate Materials

Process Capability

Item Capability
Materials BT (black/white), FR-4, PTFE, BTFE, halogen-free, high-frequency materials
Layers Through-hole 2–24 layers (sample & production); HDI production up to 10 layers / 4 stacks; HDI samples up to 14 layers / 7 stacks
Max. board size 520 × 580 mm
Finished board thickness 0.08–1.6 mm
Min. finished thickness tolerance ±0.02 mm
Min. inner core thickness 0.025 mm
Layer-to-layer registration ±0.02 mm
Circuit copper thickness 8–70 µm
Min. line width / space (inner & outer) 35 / 35 µm
Min. finished hole 0.070 mm (mechanical) / 0.035 mm (laser)
Drill size range 0.07–6.50 mm
Finished hole tolerance ±0.025 mm (PTH / NPTH)
Hole position accuracy ±0.02 mm
Hole copper thickness 10–250 µm
Max. aspect ratio 25:1
Impedance tolerance ±8%
Min. solder mask opening 2 mil
Min. solder mask dam 2 mil
Min. circuit dimension tolerance ±5 µm
Outline tolerance ±0.05 mm (2 mil)
Profiling CNC routing, automatic large-panel V-cut, die punching, laser profiling (single or panel delivery), laser V-cut, water-jet profiling

Surface finishes: OSP (also OSP + immersion gold, OSP + electrolytic gold); immersion nickel gold / ENIG (also ENIG + electrolytic gold); nickel-palladium-gold and gold-palladium-gold (non-magnetic process); immersion tin; immersion silver; electrolytic nickel-silver; electrolytic soft gold, hard gold, and soft + hard gold; electrolytic semi-bright and full-bright nickel gold.

Every substrate is 100% electrically tested and inspected before shipment.

Substrate Examples — Real Production Builds

SiP flip-chip IC substrate, 12 layers, BT

SiP flip-chip substrate

12 layers / 4 stacks, BT (black), 1.20±0.12 mm, unit 55.0×55.0 mm, line/space 40/40 µm, min. bonding 80 µm, OSP finish.

14-layer 6-stack RF IC substrate, high-speed BT

14-layer 6-stack RF substrate

High-speed BT, 1.20±0.12 mm, 190×190 mm, line/space 55/80 µm, immersion silver (non-magnetic process). 6-stack any-layer interconnect with laser drilling + electrolytic via filling.

77 GHz millimeter-wave radar substrate, FR4 and Rogers RO3003 hybrid

77 GHz millimeter-wave radar substrate

4 layers / 1 stack, FR4 + Rogers RO3003 hybrid lamination, 0.90±0.09 mm, 31.8×35.2 mm, ENIG + selective OSP.

SiP IC substrate for power devices, BT, nickel-palladium-gold

SiP substrate for power devices

4 layers, BT, 0.40±0.04 mm, unit 9.0×15.0 mm, line/space 76/80 µm, nickel-palladium-gold finish. TGV blind vias filled and copper-pillar filling for high-current power-device chips.

eMMC storage IC substrate, BT

eMMC storage substrate

2 / 4 layers, BT, 0.08 mm holes, 0.25±0.02 mm, unit 13.0×11.5 mm, line/space 50/50 µm, min. bonding 55 µm, nickel-palladium-gold finish.

MEMS IC substrate with built-in cavity, BT

MEMS substrate with built-in cavity

6 layers, BT with built-in cavity and depth-controlled holes, 0.40±0.05 mm, unit 4.72×3.76 mm, nickel-palladium-gold finish.

More production examples

Type Layers Material Thickness (mm) Unit size (mm) Line/Space Finish
UDP 2 FR4 0.26±0.02 11.3×24.8 70/50 µm ENIG, electrolytic hard Ni-Au
T-card / memory card 2 BT 0.26±0.02 11.0×15.0 50/50 µm Electrolytic soft Au + hard Ni-Au
BGA substrate 2 BT 0.22±0.02 12.0×18.0 45/50 µm Electrolytic soft Ni-Au + OSP
SiP substrate 4 BT 0.40±0.04 9.0×15.0 76/80 µm Ni/Pd/Au
LGA package substrate 4 / 1-stack BT 0.20±0.03 5.0×5.0 65/50 µm Au/Pd/Au (non-magnetic)
4030 embedded R/C silicon microphone 4 Embedded passives material 0.265±0.05 3.0×4.0 100/85 µm Ni/Pd/Au
MEMS substrate 2 SI10US 0.20±0.03 1.5×1.5 70/70 µm Ni/Pd/Au
MEMS substrate 2 BT 0.25±0.05 1.85×2.75 100/55 µm Ni/Pd/Au
MEMS device substrate 6 BT (cavity) 0.40±0.05 4.72×3.76 105/60 µm Ni/Pd/Au
PLCC substrate 4 BT 0.30±0.03 6.5×6.5 100/55 µm Ni/Pd/Au
eMMC storage substrate 2/4 BT 0.25±0.02 13.0×11.5 50/50 µm Ni/Pd/Au
LED substrate 2 BT white 0.48±0.04 0.85×0.85 120/60 µm Electrolytic Ni, Ag
MIP 0201/0606 substrate 2 BT black/white 0.14±0.03 0.68×0.38 120/50 µm ENIG
Laptop substrate 6 / 1-stack FR4 0.45±0.05 98.5×3.06 42/60 µm Ni/Pd/Au
77 GHz mmWave radar 4 / 1-stack FR4 + RO3003 hybrid 0.90±0.09 31.8×35.2 120/100 µm ENIG + selective OSP
24 GHz radar 4 / 1-stack FR4 + Kappa 438 / RO4350B 0.80±0.08 29.5×41.5 150/105 µm ENIG
24 GHz radar 4 / 1-stack S1000-M2 + S7136H hybrid 0.80±0.08 25×25 110/100 µm ENIG
UWB radar substrate 6 / 1-stack RO4350B + IT180 + F4BM hybrid 1.60±0.16 15.0×44.0 150/100 µm ENIG
SiP flip-chip substrate 12 / 4-stack BT black 1.20±0.12 55×55 40/40 µm OSP
RF substrate 14 / 6-stack High-speed BT 1.20±0.12 190×190 55/80 µm Immersion silver (non-magnetic)

IC Substrate vs. HDI PCB — What’s the Difference?

An HDI PCB connects components on a board; an IC substrate connects a bare die to that board. Substrates work at finer line/space, thinner cores, and tighter registration than board-level HDI, and use substrate-specific materials and finishes. FX PCB manufactures both — see our HDI PCB page for board-level designs.

FAQ

What is an IC substrate PCB?

A packaging substrate that carries a bare IC die and routes its connections out to the PCB, providing electrical connection, protection, and heat paths.

Which materials do you offer?

BT resin (black/white), FR-4, PTFE, BTFE, halogen-free, and high-frequency materials.

Can you handle prototypes?

Yes — HDI samples up to 14 layers / 7 stacks, through-hole samples and production up to 24 layers.

Send us your Gerber files and stack-up for a quote in 1–2 working days. Get a Quote